4MN10CH-TL-E
BIP NPN 0.1A 200VManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 4MN10CH-TL-E is a bipolar NPN RF transistor designed for high-frequency applications. This component offers a 200V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 400MHz and a maximum power dissipation of 600mW, it is suitable for signal amplification and switching in demanding RF circuits. The device features a minimum DC current gain (hFE) of 60 at 10mA and 10V. It is provided in a 3-CPH surface mount package, identified as SC-96, for efficient PCB integration. The 4MN10CH-TL-E is commonly employed in telecommunications infrastructure, industrial automation, and aerospace and defense systems where reliable RF performance is critical.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Gain | - |
| Power - Max | 600mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 200V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 10V |
| Frequency - Transition | 400MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 3-CPH |
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