3MN03SF-TL-E
BIP NPN 30MA 20VManufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi 3MN03SF-TL-E is a bipolar NPN RF transistor designed for high-frequency applications. This component features a collector current (Ic) maximum of 30mA and a collector-emitter breakdown voltage of 20V. With a transition frequency of 320MHz and a typical noise figure of 3dB at 100MHz, it is well-suited for RF amplification and switching tasks. The device offers a minimum DC current gain (hFE) of 60 at 1mA collector current and 6V Vce. Packaged in a 3-SSFP (3-SMD, Flat Leads) surface mount configuration, this transistor is suitable for high-density circuit designs. Its power dissipation capability is 150mW. This component finds application in mobile communications, wireless infrastructure, and other RF front-end circuits.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 1mA, 6V |
| Frequency - Transition | 320MHz |
| Noise Figure (dB Typ @ f) | 3dB @ 100MHz |
| Supplier Device Package | 3-SSFP |
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