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2SC6023-TR-E

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2SC6023-TR-E

NPN 35MA 3.5V FT=14.5G

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi NPN RF Transistor, Part Number 2SC6023-TR-E. This bipolar transistor features a 3.5V collector-emitter breakdown voltage and a maximum collector current of 35mA. It offers a transition frequency of 14.5GHz and a typical gain range of 9.5dB to 11dB. The noise figure is rated at 1.2dB at 2GHz. Designed for surface mount applications, it is housed in a 4-MCP (SC-82A, SOT-343) package, consuming a maximum power of 120mW. The DC current gain (hFE) is a minimum of 80 at 15mA and 3V. This component is utilized in wireless communication systems and high-frequency signal amplification.

Additional Information

Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Gain9.5dB ~ 11dB
Power - Max120mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 15mA, 3V
Frequency - Transition14.5GHz
Noise Figure (dB Typ @ f)1.2dB @ 2GHz
Supplier Device Package4-MCP

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