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2SC5646A-TL-H

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2SC5646A-TL-H

RF TRANS NPN 4V 12.5GHZ 3SSFP

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

The onsemi 2SC5646A-TL-H is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector current of 30mA and a collector-emitter breakdown voltage of 4V. The transition frequency ranges from 10GHz to 12.5GHz, with a typical gain of 9.5dB to 10.5dB at 2GHz. The noise figure is specified at 1.5dB at 2GHz. This device is rated for a maximum power dissipation of 100mW and operates at an elevated junction temperature of 150°C. Supplied in a 3-SSFP package, the 2SC5646A-TL-H is mounted via surface mount technology and comes on a tape and reel. This transistor is suitable for use in wireless communication systems and RF amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-81
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain9.5dB ~ 10.5dB @ 2GHz
Power - Max100mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)4V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 1V
Frequency - Transition10GHz ~ 12.5GHz
Noise Figure (dB Typ @ f)1.5dB @ 2GHz
Supplier Device Package3-SSFP

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