2SC5551AF-TD-E
RF TRANS NPN 30V 3.5GHZ PCPManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2SC5551AF-TD-E is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a 30V collector-emitter breakdown voltage and a maximum collector current of 300mA, suitable for demanding RF designs. With a transition frequency of 3.5GHz and a maximum power dissipation of 1.3W, it excels in signal amplification and switching within the RF spectrum. The device features a minimum DC current gain (hFE) of 135 at 50mA and 5V, ensuring robust performance. Packaged in a TO-243AA (PCP) surface mount configuration and supplied on tape and reel, the 2SC5551AF-TD-E is well-suited for automated assembly in wireless communications, radar systems, and other high-frequency electronic equipment. It operates reliably at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 1.3W |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 50mA, 5V |
| Frequency - Transition | 3.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | PCP |
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