2SC5551AE-TD-E
RF TRANS NPN 30V 3.5GHZ PCPManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2SC5551AE-TD-E is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 30V and a maximum collector current of 300mA, this component offers a transition frequency of 3.5GHz. Its power dissipation capability is rated at 1.3W. The transistor is housed in a PCP (TO-243AA) package, suitable for surface mounting. Typical DC current gain (hFE) is 90 at 50mA and 5V. This device finds application in wireless communication systems and other RF circuitry requiring robust performance. The 2SC5551AE-TD-E is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 1.3W |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 30V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 50mA, 5V |
| Frequency - Transition | 3.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | PCP |