2SC5536A-TL-H
RF TRANS NPN 12V 1.7GHZ 3SSFPManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2SC5536A-TL-H is an NPN bipolar RF transistor designed for high-frequency amplification. This component operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA. It features a transition frequency of 1.7GHz and provides a typical gain of 16dB. The device exhibits a noise figure of 1.8dB at 150MHz. Optimized for surface-mount applications, it is supplied in a 3-SSFP package (SC-81) on tape and reel. This transistor is suitable for use in wireless communication systems, RF front-ends, and other signal amplification circuits within the telecommunications and consumer electronics industries. The minimum DC current gain (hFE) is 80 at 3mA collector current and 2V Vce. The maximum operating junction temperature is 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-81 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 16dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 3mA, 2V |
| Frequency - Transition | 1.7GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 150MHz |
| Supplier Device Package | 3-SSFP |
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