2SC5415AF-TD-E
2SC5415A - RF TRANSISTOR, UPN SIManufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi 2SC5415AF-TD-E is an NPN bipolar RF transistor designed for high-frequency applications with a 12V collector-emitter breakdown voltage. This surface mount component, packaged in a TO-243AA (PCP) form factor, offers a maximum collector current of 100mA and a power dissipation of 800mW. It features a transition frequency of 6.7GHz and a typical gain of 9dB. The DC current gain (hFE) is a minimum of 90 at 30mA and 5V. With a low noise figure of 1.1dB at 1GHz, this transistor is suitable for demanding RF circuits in wireless communication systems and other high-frequency electronic equipment. It operates within an extended temperature range up to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 800mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 30mA, 5V |
| Frequency - Transition | 6.7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | PCP |
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