2SC5415AE-TD-E
RF TRANS NPN 12V 6.7GHZ PCPManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2SC5415AE-TD-E is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector current rating of 100mA and a collector-emitter breakdown voltage of 12V, this component offers a transition frequency of 6.7GHz. The device exhibits a typical gain of 9dB and a noise figure of 1.1dB at 1GHz. With a maximum power dissipation of 800mW, it is suitable for surface mount applications, provided in a PCP (TO-243AA) package on tape and reel. This transistor is commonly utilized in wireless communication systems, radar, and other RF front-end designs. Its minimum DC current gain (hFE) is 90 at 30mA and 5V. The operating junction temperature can reach up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 9dB |
| Power - Max | 800mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 30mA, 5V |
| Frequency - Transition | 6.7GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1GHz |
| Supplier Device Package | PCP |
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