2SC5347AE-TD-E
RF TRANS NPN 12V 4.7GHZ PCPManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2SC5347AE-TD-E is an NPN bipolar RF transistor designed for high-frequency applications. This device features a collector current (Ic) capability of up to 150mA and a collector-emitter breakdown voltage of 12V. With a transition frequency (fT) of 4.7GHz and a typical gain of 8dB, it is well-suited for RF amplification stages. The noise figure is rated at 1.8dB typical at 1GHz. This component is supplied in a TO-243AA (PCP) package for surface mounting and is delivered on tape and reel (TR). Its robust construction allows for operation at junction temperatures up to 150°C. The 2SC5347AE-TD-E finds utility in wireless communication systems, radar, and general-purpose RF circuitry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 8dB |
| Power - Max | 1.3W |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 50mA, 5V |
| Frequency - Transition | 4.7GHz |
| Noise Figure (dB Typ @ f) | 1.8dB @ 1GHz |
| Supplier Device Package | PCP |
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