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2SC5277A-2-TL-E

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2SC5277A-2-TL-E

RF TRANS NPN 10V 8GHZ SMCP

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi NPN RF Transistor, part number 2SC5277A-2-TL-E, is designed for high-frequency applications. This device offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 30mA. It features a transition frequency of 8GHz and provides a gain range of 10dB to 5.5dB at 1.5GHz. The typical noise figure is 1.4dB at 1.5GHz, improving to 0.9dB at 1GHz. With a maximum power dissipation of 100mW, this NPN transistor is housed in an SC-75, SOT-416 (SMCP) package and is supplied on tape and reel. Applications include RF amplification and switching in telecommunications and wireless infrastructure.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-
Gain10dB ~ 5.5dB @ 1.5GHz
Power - Max100mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce90 @ 10mA, 5V
Frequency - Transition8GHz
Noise Figure (dB Typ @ f)1.4dB ~ 0.9dB @ 1.5GHz ~ 1GHz
Supplier Device PackageSMCP

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