2SC5231C9-TL-E
2SC5231 - RF SMALL SIGNAL BIPOLAManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2SC5231C9-TL-E is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 10V and a maximum collector current of 70mA. With a transition frequency of 7GHz and a typical gain of 12dB at 1GHz, it is well-suited for RF amplification stages. The noise figure is rated at 1dB typically at 1GHz. Operating at a maximum junction temperature of 150°C, this transistor is provided in a 3-SMCP (SC-75, SOT-416) surface mount package for efficient board integration. Its power dissipation capability is 100mW. This device finds application in wireless communications infrastructure and other RF signal processing systems.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 20mA, 5V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 1GHz |
| Supplier Device Package | 3-SMCP |
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