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2SC5231A-9-TL-E

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2SC5231A-9-TL-E

RF TRANS NPN 10V 7GHZ SMCP

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi NPN RF Transistor 2SC5231A-9-TL-E delivers robust performance for demanding RF applications. This bipolar RF transistor offers a 10V collector-emitter breakdown voltage and a maximum collector current of 70mA. Engineered for high-frequency operation, it exhibits a transition frequency of 7GHz and provides a gain range of 12dB to 8.5dB at 1GHz. The typical noise figure at 1GHz is 1dB. This component is packaged in a 3-SMD, Gull Wing (SMCP) for surface mounting and is supplied on tape and reel. It is suitable for operation in environments up to 150°C (TJ) and dissipates a maximum power of 100mW. The minimum DC current gain (hFE) is 135 at 20mA/5V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Gull Wing
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain12dB ~ 8.5dB @ 1GHz
Power - Max100mW
Current - Collector (Ic) (Max)70mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce135 @ 20mA, 5V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1dB @ 1GHz
Supplier Device PackageSMCP

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