2SC5227A-5-TB-E
RF TRANS NPN 10V 7GHZ 3CPManufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi 2SC5227A-5-TB-E is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector current (Ic) capability of up to 70mA, a collector-emitter breakdown voltage of 10V, and a transition frequency (fT) of 7GHz. The 2SC5227A-5-TB-E offers a minimum DC current gain (hFE) of 135 at 20mA and 5V, with a typical gain of 12dB. Its noise figure is rated at 1dB typical at 1GHz. This device is supplied in a 3-CP (TO-236-3, SC-59, SOT-23-3) surface mount package, delivered on tape and reel for automated assembly. It is rated for a maximum power dissipation of 200mW and operates at temperatures up to 150°C. This transistor is suitable for use in wireless communication systems and other RF circuitry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 20mA, 5V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 1GHz |
| Supplier Device Package | 3-CP |
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