2SC5227A-4-TB-E
RF TRANS NPN 10V 7GHZ 3CPManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2SC5227A-4-TB-E is an NPN bipolar RF transistor designed for high-frequency applications. This device offers a collector current of up to 70mA and a collector-emitter breakdown voltage of 10V. With a transition frequency of 7GHz and a power dissipation of 200mW, it is suitable for demanding RF circuits. The typical gain is 12dB, and it exhibits a noise figure of 1dB at 1GHz. This transistor features a surface mount design, supplied in a 3-CP (TO-236-3, SC-59, SOT-23-3) package, delivered on a tape and reel. The DC current gain (hFE) minimum is 90 at 20mA and 5V. This component is utilized in various communication systems and electronic equipment requiring efficient RF amplification.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 12dB |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 20mA, 5V |
| Frequency - Transition | 7GHz |
| Noise Figure (dB Typ @ f) | 1dB @ 1GHz |
| Supplier Device Package | 3-CP |