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2SC5226A-5-TL-E

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2SC5226A-5-TL-E

RF TRANS NPN 10V 7GHZ 3MCP

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi 2SC5226A-5-TL-E is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device operates at a collector voltage breakdown of 10V and a maximum collector current of 70mA. Featuring a transition frequency of 7GHz and a typical gain of 12dB, it is suitable for demanding RF circuits. The transistor exhibits a minimum DC current gain (hFE) of 135 at 20mA and 5V. Its noise figure is rated at 1dB typical at 1GHz. The component has a maximum power dissipation of 150mW and can operate at junction temperatures up to 150°C. The 2SC5226A-5-TL-E is supplied in a 3-MCP package, specifically SC-70, SOT-323, on tape and reel for automated assembly. This transistor finds application in wireless communication systems and other RF front-end circuitry.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain12dB
Power - Max150mW
Current - Collector (Ic) (Max)70mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce135 @ 20mA, 5V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)1dB @ 1GHz
Supplier Device Package3-MCP

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