2SC4853A-4-TL-E
RF TRANS NPN 6V 5GHZ 3MCPManufacturer: onsemi
Categories: Bipolar RF Transistors
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onsemi NPN RF Transistor, Part Number 2SC4853A-4-TL-E, is engineered for high-frequency applications. This surface mount device operates with a collector-emitter breakdown voltage of 6V and a maximum collector current of 15mA. It features a transition frequency of 5GHz, delivering a gain of 7dB to 10.5dB at 1GHz. The noise figure is rated between 2.6dB and 1.9dB at 1GHz, and the DC current gain (hFE) is a minimum of 90 at 1mA, 1V. With a maximum power dissipation of 90mW and an operating temperature up to 150°C (TJ), the transistor is housed in a 3-MCP (SC-70, SOT-323) package, supplied on tape and reel. This component is suitable for use in wireless communications infrastructure and other RF front-end circuitry.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 7dB ~ 10.5dB @ 1GHz |
| Power - Max | 90mW |
| Current - Collector (Ic) (Max) | 15mA |
| Voltage - Collector Emitter Breakdown (Max) | 6V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 90 @ 1mA, 1V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 2.6dB ~ 1.9dB @ 1GHz |
| Supplier Device Package | 3-MCP |
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