2SA1778-3-TB-E
PNP TRANSISTORManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2SA1778-3-TB-E is a PNP bipolar RF transistor designed for high-frequency applications. This device features a collector current capability of 50mA and a collector-emitter breakdown voltage of 15V. With a transition frequency of 1.2GHz and a typical gain of 13dB, it is well-suited for RF amplification stages. The noise figure is rated at 2.5dB at 400MHz, ensuring low-noise performance. Packaged in a 3-CP (TO-236-3, SC-59, SOT-23-3) surface mount configuration, it offers a maximum power dissipation of 250mW. This component is commonly utilized in wireless communication systems, radio frequency modules, and other signal processing applications where efficient high-frequency signal handling is critical. The DC current gain (hFE) is a minimum of 60 at 5mA collector current and 10V Vce.
Additional Information
Series: -RoHS Status: Vendor undefinedManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Gain | 13dB |
| Power - Max | 250mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Frequency - Transition | 1.2GHz |
| Noise Figure (dB Typ @ f) | 2.5dB @ 400MHz |
| Supplier Device Package | 3-CP |
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