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2N5770

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2N5770

RF TRANS NPN 15V TO92-3

Manufacturer: onsemi

Categories: Bipolar RF Transistors

Quality Control: Learn More

onsemi 2N5770 is an NPN bipolar RF transistor designed for high-frequency applications. This through-hole component, housed in a TO-92-3 package, offers a 15V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a power dissipation of 350mW, it provides a typical gain of 15dB and a noise figure of 6dB at 60MHz. The DC current gain (hFE) is a minimum of 50 at 8mA collector current and 10V Vce. This device is suitable for use in various RF circuits across industries such as telecommunications and consumer electronics. It operates within a temperature range of -55°C to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Gain15dB
Power - Max350mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 8mA, 10V
Frequency - Transition-
Noise Figure (dB Typ @ f)6dB @ 60MHz
Supplier Device PackageTO-92-3

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