2N3663
RF TRANS NPN 12V 2.1GHZ TO92-3Manufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 2N3663 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA, this device offers a transition frequency of 2.1GHz. With a typical gain of 1.5dB and a noise figure of 6.5dB at 60MHz, the 2N3663 is suitable for RF amplification stages. The device operates with a power dissipation of 350mW and is packaged in a TO-92-3 (TO-226-3) through-hole mounting configuration. Typical applications include RF front-ends and signal amplification in wireless communication systems and test equipment. The minimum DC current gain (hFE) is 20 at 8mA and 10V. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Gain | 1.5dB |
| Power - Max | 350mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 8mA, 10V |
| Frequency - Transition | 2.1GHz |
| Noise Figure (dB Typ @ f) | 6.5dB @ 60MHz |
| Supplier Device Package | TO-92-3 |
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