15GN01CA-TB-E
RF TRANS NPN 8V 1.5GHZ 3CPManufacturer: onsemi
Categories: Bipolar RF Transistors
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The onsemi 15GN01CA-TB-E is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 8V and a maximum collector current of 50mA. With a transition frequency of 1.5GHz and a maximum power dissipation of 200mW, it is suitable for amplifying and switching signals in demanding RF circuits. The DC current gain (hFE) is a minimum of 200 at 10mA and 5V. It features a surface mount design, packaged in a 3-CP (TO-236-3, SC-59, SOT-23-3) configuration and supplied on a tape and reel. This transistor finds utility in various communication systems and wireless infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 200mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA, 5V |
| Frequency - Transition | 1.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | 3-CP |
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