BLF7G22LS-160,112
FET RF 65V 2.17GHZ SOT502BManufacturer: NXP USA Inc.
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NXP USA Inc. BLF7G22LS-160-112 is a high-performance RF power transistor designed for demanding wireless applications. This LDMOS device operates at 2.17 GHz and features a 65V drain-source voltage rating, enabling robust power delivery. Housed in a SOT502B package, it offers excellent thermal management for sustained operation. Its advanced semiconductor technology ensures high efficiency and linearity, making it suitable for base station infrastructure and other professional mobile radio systems. This component is engineered for reliability in high-frequency power amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
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