PDTD123ES,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTD123ES-126 is an NPN pre-biased bipolar transistor designed for through-hole mounting in a TO-92-3 package. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 40 at 50mA and 5V, with a Vce saturation of 300mV at 2.5mA and 50mA. The integrated base resistors are R1 at 2.2 kOhms and R2 at 2.2 kOhms. Maximum power dissipation is 500mW, and the collector cutoff current is specified at 500nA. This transistor is suitable for applications in consumer electronics and industrial control systems. The product is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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