PDTD123EK,115
TRANS PREBIAS NPN 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTD123EK-115 is a pre-biased NPN bipolar transistor. This surface mount component, housed in an SMT3 MPAK package (TO-236-3, SC-59, SOT-23-3), offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It features integrated base resistors (R1 = 2.2 kOhms, R2 = 2.2 kOhms), simplifying circuit design. The device exhibits a minimum DC current gain (hFE) of 40 at 50mA, 5V and a saturation voltage (Vce Sat) of 300mV at 2.5mA, 50mA. Maximum power dissipation is 250mW. This component is suitable for applications in industrial automation, consumer electronics, and communication systems. Supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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