PDTD113ZS,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTD113ZS-126 is an NPN pre-biased bipolar junction transistor designed for general-purpose applications. This device features integrated base resistors, simplifying circuit design and reducing component count. It offers a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. The transistor exhibits a minimum DC current gain (hFE) of 70 at 50mA and 5V. With a maximum power dissipation of 500mW, it is suitable for through-hole mounting in a TO-92-3 package. The internal base resistors are R1 at 1 kOhm and R2 at 10 kOhm, resulting in a Vce saturation of 300mV at 2.5mA base current and 50mA collector current. Industries utilizing this component include industrial automation and consumer electronics. The PDTD113ZS-126 is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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