PDTD113ZK,115
TRANS PREBIAS NPN 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTD113ZK-115 is an NPN pre-biased bipolar transistor. This surface mount component, housed in an SMT3 (MPAK) package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It features integrated base resistors R1 (1 kOhms) and R2 (10 kOhms), providing a typical DC current gain (hFE) of 70 at 50mA collector current and 5V collector-emitter voltage. The device has a maximum power dissipation of 250 mW and a collector cutoff current of 500nA. Saturation voltage is specified at 300mV for 2.5mA base current and 50mA collector current. This transistor is suitable for applications in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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