PDTD113ES,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTD113ES-126 is a pre-biased NPN bipolar transistor housed in a TO-92-3 package. This component features integrated base resistors (R1 and R2) of 1 kOhm each, simplifying circuit design by eliminating external biasing components. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA, with a power dissipation capability of 500mW. The transistor exhibits a typical DC current gain (hFE) of 33 at 50mA collector current and 5V collector-emitter voltage. Saturation voltage at 50mA collector current is specified at a maximum of 300mV. This device is suitable for applications in consumer electronics and industrial automation where simplified biasing and space-saving are critical. The PDTD113ES-126 is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
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