PDTD113EK,115
TRANS PREBIAS NPN 50V 0.5A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTD113EK-115 is a pre-biased NPN bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 33 at 50mA and 5V. The transistor includes integrated base resistors (R1 and R2) of 1 kOhm each, simplifying circuit design. The Vce saturation is 300mV at 2.5mA base current and 50mA collector current. With a maximum power dissipation of 250mW, it is suitable for use in the consumer electronics and industrial automation sectors. The device is supplied in a Tape & Reel (TR) package, with the SMT3; MPAK supplier device package corresponding to TO-236-3, SC-59, SOT-23-3.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
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