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PDTC144WS,126

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PDTC144WS,126

TRANS PREBIAS NPN 50V TO92-3

Manufacturer: NXP USA Inc.

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. PDTC144WS-126 is a pre-biased NPN bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Designed for surface mount applications, it is housed in a TO-92-3 package. The integrated base resistors are R1 at 47 kOhms and R2 at 22 kOhms, facilitating simplified circuit design. With a maximum power dissipation of 500mW and a Vce saturation of 150mV at 500µA/10mA, this transistor is suitable for digital logic applications, driver circuits, and switching functions in industrial and consumer electronics. The DC current gain (hFE) is a minimum of 60 at 5mA, 5V, and the collector cutoff current is rated at a maximum of 1µA. Supplied in Tape & Box (TB) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms

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