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PDTC144WE,115

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PDTC144WE,115

TRANS PREBIAS NPN 50V 0.1A SC75

Manufacturer: NXP USA Inc.

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. PDTC144WE-115 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimum DC current gain (hFE) of 60 at 5mA collector current and 5V Vce. The transistor is housed in an SC-75 (SOT-416) package, supplied in tape and reel. Internal base resistors include R1 at 47 kOhms and R2 at 22 kOhms, facilitating simplified circuit design. The maximum power dissipation is 150mW. This device is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-75, SOT-416
Mounting TypeSurface Mount
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Supplier Device PackageSC-75
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
Resistor - Base (R1)47 kOhms
Resistor - Emitter Base (R2)22 kOhms

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