PDTC144VE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC144VE-115 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device integrates internal base resistors, with R1 specified at 47 kOhms and R2 at 10 kOhms, simplifying circuit design. It offers a minimum DC current gain (hFE) of 40 at 5mA collector current and 5V Vce. The transistor exhibits a saturation voltage (Vce Sat) of 150mV maximum at 500µA base current and 10mA collector current. With a maximum power dissipation of 150mW, this transistor is supplied in an SC-75 (SOT-416) package, delivered on tape and reel. It finds application in various industrial and consumer electronics where robust signal switching and amplification are required.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |