PDTC144TE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC144TE-115 is a pre-biased NPN bipolar transistor designed for low-power switching and amplification applications. This component features an integrated base resistor (R1) of 47 kOhms, simplifying circuit design and reducing component count. The PDTC144TE-115 offers a collector-emitter breakdown voltage (Vce) of 50V and a maximum collector current (Ic) of 100mA, with a power dissipation rating of 150mW. Key specifications include a minimum DC current gain (hFE) of 100 at 1mA and 5V, and a collector cutoff current (Icbo) of 1µA. The saturation voltage (Vce(sat)) is a maximum of 150mV at 500µA base current and 10mA collector current. This device is supplied in an SC-75 (SOT-416) surface-mount package, delivered on tape and reel. It finds application in various consumer electronics and industrial control systems requiring compact and efficient transistor solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 47 kOhms |