PDTC144ES,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC144ES-126 is a pre-biased NPN bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a power dissipation of 500mW and a saturation voltage of 150mV at 500µA base current and 10mA collector current. The integrated base resistor (R1) is 47 kOhms and the emitter base resistor (R2) is 47 kOhms, providing built-in biasing. With a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V Vce, this transistor is suitable for applications requiring simplified circuit design and reduced component count. The TO-92-3 package with formed leads is designed for through-hole mounting. This device finds use in industrial automation, consumer electronics, and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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