PDTC144EE,135
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTC144EE-135 is an NPN pre-biased bipolar transistor designed for general-purpose switching and amplification in space-constrained applications. This device features integrated base resistors (47 kOhms for R1, 47 kOhms for R2) facilitating simplified circuit design and component reduction. It offers a collector-emitter breakdown voltage of 50 V and a maximum continuous collector current of 100 mA. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5 mA collector current and 5 V Vce. Maximum power dissipation is rated at 150 mW. The PDTC144EE-135 is supplied in a compact SC-75 (SOT-416) surface-mount package, presented on a Tape & Reel. This component is commonly employed in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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