PDTC144EE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. offers the PDTC144EE-115, a pre-biased NPN bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. The integrated base resistors, R1 and R2, are both rated at 47 kOhms, simplifying circuit design. With a maximum power dissipation of 150 mW, the PDTC144EE-115 is suitable for surface mount applications in the SC-75 (SOT-416) package. It exhibits a minimum DC current gain (hFE) of 80 at 5 mA collector current and 5 V collector-emitter voltage, and a saturation voltage (Vce Sat) of 150 mV at 500 µA base current and 10 mA collector current. The collector cutoff current is a maximum of 1 µA. This device is commonly found in industrial and consumer electronics applications requiring simplified switching or logic functions. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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