PDTC143ZEF,115
TRANS PREBIAS NPN 50V 0.1A SC89Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC143ZEF-115 is a pre-biased NPN bipolar transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors (R1: 4.7 kOhms, R2: 47 kOhms) for simplified circuit design, enabling a minimum DC current gain (hFE) of 100 at 10mA collector current and 5V collector-emitter voltage. The device has a maximum collector cutoff current of 1µA and a Vce saturation voltage of 100mV at 250µA base current and 5mA collector current. With a maximum power dissipation of 250mW, this transistor is housed in an SC-89 (SOT-490) package and supplied on tape and reel. It finds application in various industrial electronics and consumer devices requiring simplified switching and logic functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | SC-89 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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