PDTC143ZE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
NXP USA Inc. PDTC143ZE-115 is a pre-biased NPN bipolar transistor designed for digital applications. This component features integrated base resistors, R1 at 4.7 kOhms and R2 at 47 kOhms, simplifying circuit design by eliminating external biasing components. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a minimum DC current gain (hFE) of 100 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at a maximum of 100mV for 250µA base current and 5mA collector current. With a maximum power dissipation of 150mW, the PDTC143ZE-115 is housed in an SC-75 (SOT-416) surface-mount package, provided in Tape & Reel (TR) packaging. This device is suitable for use in consumer electronics, industrial control, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
PDTD114EU135
TRANS PREBIAS
PDTA123TK,115
TRANS PREBIAS PNP 50V 0.1A SMT3
PDTC123JK,115
TRANS PREBIAS NPN 50V 0.1A SMT3
