PDTC143XS,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. Pre-Biased NPN Transistor, PDTC143XS-126. This NPN bipolar transistor features integrated base resistors, simplifying circuit design. It offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device boasts a power dissipation of 500mW and a saturation voltage of 100mV at 500µA base current and 10mA collector current. The minimum DC current gain (hFE) is 50 at 10mA collector current and 5V collector-emitter voltage. The built-in base resistors are R1 at 4.7 kOhms and R2 at 10 kOhms, with a collector cutoff current of 1µA. Packaged in a TO-92-3 (TO-226-3) through-hole configuration and supplied in Tape & Box, this component is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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