PDTC143XK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. Single, Pre-Biased Bipolar Transistor, PDTC143XK-115. This NPN, pre-biased BJT features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. With a maximum power dissipation of 250 mW, it is supplied in a Tape & Reel (TR) package. The device utilizes a 4.7 kOhms base resistor (R1) and a 10 kOhms emitter-base resistor (R2), offering a minimum DC current gain (hFE) of 50 at 10 mA, 5 V. Saturation voltage is specified at 100 mV at 500 µA, 10 mA. The surface mount package, TO-236-3, SC-59, SOT-23-3 (SMT3; MPAK), is suitable for applications in industrial automation and consumer electronics. Collector cutoff current is a maximum of 1 µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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