PDTC143XE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. NPN pre-biased bipolar transistor, part number PDTC143XE-115, offers a robust solution for digital logic level shifting and switching applications. This device features integrated base resistors, specified as 4.7 kOhms (R1) and 10 kOhms (R2), simplifying circuit design and reducing component count. The transistor exhibits a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. Its DC current gain (hFE) is a minimum of 50 at 10mA collector current and 5V collector-emitter voltage. The PDTC143XE-115 is housed in a compact SC-75 (SOT-416) surface-mount package, supplied on tape and reel, and has a maximum power dissipation of 150mW. This component is commonly found in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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