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Single, Pre-Biased Bipolar Transistors

PDTC143TS,126

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PDTC143TS,126

TRANS PREBIAS NPN 50V TO92-3

Manufacturer: NXP USA Inc.

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

NXP USA Inc. PDTC143TS-126 is an NPN pre-biased bipolar transistor. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It offers a typical DC current gain (hFE) of 200 at 1mA and 5V. The transistor operates with a maximum power dissipation of 500 mW. The internal base resistor (R1) is specified at 4.7 kOhms. The device is housed in a TO-92-3 package with formed leads and is supplied in Tape & Box packaging. Applications include logic level shifting and digital circuit interfacing in industrial and consumer electronics. Collector cutoff current is a maximum of 1µA.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 1mA, 5V
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW
Resistor - Base (R1)4.7 kOhms

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