PDTC143TK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC143TK-115 is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a pre-defined base resistor (R1) of 4.7 kOhms, simplifying circuit design by eliminating the need for external biasing resistors. The transistor exhibits a minimum DC current gain (hFE) of 200 at 1mA collector current and 5V collector-emitter voltage. With a maximum power dissipation of 250mW, it is suitable for applications requiring low-power switching and amplification. The Vce saturation voltage is specified at a maximum of 100mV at 250µA base current and 5mA collector current. This component is supplied in a Tape & Reel (TR) package, conforming to the SMT3; MPAK standard, specifically the TO-236-3, SC-59, SOT-23-3 package outline. It finds utility in various industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 4.7 kOhms |