PDTC143TE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTC143TE-115 is an NPN, pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a minimal Vce saturation of 100mV at 250µA base current and 5mA collector current. The device boasts a minimum DC current gain (hFE) of 200 at 1mA collector current and 5V Vce. A built-in 4.7 kOhm base resistor provides convenient biasing. With a maximum power dissipation of 150mW, the PDTC143TE-115 is packaged in an SC-75 (SOT-416) and supplied on tape and reel. This transistor is commonly utilized in digital logic, switching applications, and general-purpose amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |