PDTC143ES,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC143ES-126 is an NPN pre-biased bipolar transistor featuring integrated base resistors. This component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a power dissipation of 500mW, it is supplied in a TO-92-3 package suitable for through-hole mounting. The device includes a built-in 4.7kO base resistor (R1) and a 4.7kO emitter-base resistor (R2), simplifying circuit design. Key specifications include a saturation voltage of 150mV at 500µA/10mA and a minimum DC current gain (hFE) of 30 at 10mA/5V. The collector cutoff current is a maximum of 1µA. This transistor is commonly utilized in industrial automation, consumer electronics, and automotive applications. It is available in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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