PDTC143EEF,115
TRANS PREBIAS NPN 50V 0.1A SC89Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTC143EEF-115 is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features integrated base resistors, specified as 4.7 kOhms for both R1 and R2, simplifying circuit design and reducing component count. With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, it is suitable for low-power switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 30 at 10 mA collector current and 5 V Vce. Its Vce saturation is a maximum of 150 mV at 500 µA base current and 10 mA collector current. The maximum power dissipation is 250 mW, and it is supplied in a Tape & Reel package, with the SC-89 (SOT-490) being the supplier device package. This part is commonly found in consumer electronics and industrial automation applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | SC-89 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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