PDTC143EE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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The NXP USA Inc. PDTC143EE-115 is a pre-biased NPN bipolar transistor designed for surface mount applications. This component, housed in an SC-75 (SOT-416) package, offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors (R1 = 4.7 kOhms) and emitter base resistors (R2 = 4.7 kOhms), simplifying circuit design. The device exhibits a saturation voltage of 150mV at 500µA base current and 10mA collector current, with a minimum DC current gain (hFE) of 30 at 10mA collector current and 5V Vce. Rated for a maximum power dissipation of 150mW, the PDTC143EE-115 is supplied on tape and reel. This transistor finds application in various electronic systems, including consumer electronics and industrial control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |