PDTC124XS,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
NXP USA Inc. PDTC124XS-126 is a pre-biased NPN bipolar transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 (22 kOhms) and R2 (47 kOhms), simplify circuit design and reduce component count. With a maximum power dissipation of 500mW and a low collector cutoff current of 1µA, it is suitable for various general-purpose switching and amplification tasks. The device offers a minimum DC current gain (hFE) of 80 at 5mA and 5V. Packaged in a TO-92-3 (TO-226-3) through-hole style with formed leads, it is supplied in Tape & Box (TB). This transistor finds utility in consumer electronics, industrial automation, and telecommunications equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |