PDTC124XK,115
TRANS PREBIAS NPN 50V 0.1A SMT3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. presents the PDTC124XK-115, a pre-biased NPN bipolar transistor. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA, with a power dissipation of 250mW. The device includes integrated base resistors (R1 = 22 kOhms, R2 = 47 kOhms) for simplified circuit design. It offers a minimum DC current gain (hFE) of 80 at 5mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 150mV at 500µA base current and 10mA collector current, with a collector cutoff current (Ic(max)) of 1µA. The PDTC124XK-115 is supplied in a SMT3; MPAK package, suitable for surface mounting applications, and is available on tape and reel. This transistor is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SMT3; MPAK |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 250 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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