PDTC124XE,115
TRANS PREBIAS NPN 50V 0.1A SC75Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
NXP USA Inc. PDTC124XE-115 is an NPN pre-biased bipolar transistor designed for surface mounting in the SC-75 (SOT-416) package. This component features a collector-emitter voltage breakdown of 50V and a maximum collector current of 100mA. The integrated base resistors are R1 at 22 kOhms and R2 at 47 kOhms, facilitating simplified circuit design. With a maximum power dissipation of 150mW and a minimum DC current gain (hFE) of 80 at 5mA and 5V, the PDTC124XE-115 is suitable for applications requiring controlled switching and amplification. The device exhibits a Vce saturation of 150mV at 500µA and 10mA, with a collector cutoff current of 1µA. This transistor is commonly utilized in digital logic circuits, interface circuits, and general-purpose switching applications across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Supplier Device Package | SC-75 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |