PDTC124TS,126
TRANS PREBIAS NPN 50V TO92-3Manufacturer: NXP USA Inc.
Categories: Single, Pre-Biased Bipolar Transistors
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NXP USA Inc. PDTC124TS-126 is an NPN pre-biased bipolar transistor designed for through-hole mounting in a TO-92-3 package. This component features a Collector-Emitter Breakdown Voltage of 50V and a maximum Collector Current (Ic) of 100mA. The device offers a minimum DC Current Gain (hFE) of 100 at 1mA and 5V, with a Collector Cutoff Current (Max) of 1µA. It has a maximum power dissipation of 500mW. The integrated base resistor (R1) is 22 kOhms, and the Vce Saturation is a maximum of 150mV at 500µA, 10mA. This transistor is suitable for applications in consumer electronics, industrial automation, and automotive systems. Packaging is supplied on Tape & Box (TB).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Resistor - Base (R1) | 22 kOhms |
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